Ideal Vacuum Circular Magnetron Sputtering Targets, HAFNIUM - Hf Sputtering Target, 3'' Diameter x 0.25" Thick, 99.99 Percent Purity

This product is a circular magnetron HAFNIUM - Hf sputtering target, with a 3'' diameter x 0.25" thickness. It is 99.99% pure.

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HAFNIUM - Hf

Hafnium Metal – Key Properties for PVD Sputtering Targets
Appearance: Silvery-gray transition metal
Density: ~13.31 g/cm³ (very dense)
Crystal Structure: Hexagonal close-packed (HCP)
Melting Point: 2233 °C (very high, excellent thermal stability)
Boiling Point: ~4602 °C
Thermal Conductivity: ~23 W/m·K (moderate, requires good cooling)
Electrical Resistivity: ~33.1 µO·cm (good conductor for DC sputtering)
Corrosion Resistance: Excellent, especially against alkalis and acids
Neutron Absorption: Very low thermal neutron absorption cross-section (useful in nuclear applications)
Sputtering Yield: Lower than soft metals, moderate deposition rates
Reactivity: Forms stable compounds (HfO2, HfN) with oxygen and nitrogen
Hardness & Stability: Very high melting point and mechanical robustness, resistant to erosion and thermal damage

Hf Properties and Applications:
Hafnium (Hf) is a dense, silvery-gray transition metal with a density of ~13.31 g/cm³ and a high melting point of 2233 °C, giving it excellent thermal stability during sputtering. It has good corrosion resistance, low thermal neutron absorption, and a hexagonal close-packed (HCP) crystal structure. Its electrical resistivity (~33.1 µO·cm) is higher than many metals, but still suitable for efficient DC sputtering. Hafnium also has moderate thermal conductivity (~23 W/m·K), meaning it retains heat more than high-conductivity metals and benefits from good cooling in the target assembly.

In PVD, hafnium targets are used for producing pure Hf films or compounds such as hafnium oxide (HfO2) and hafnium nitride (HfN). HfO2 is a high-k dielectric widely applied in advanced semiconductors, optical coatings, and protective layers. HfN is valued for its hardness, high melting point, and golden metallic appearance. These materials are used in microelectronics, hard coatings, corrosion-resistant layers, and optics.

Hafnium targets have relatively lower sputter yields compared to softer metals, so deposition rates are moderate, especially for compounds. The high melting point allows for use with higher power densities without risk of melting, but care is still needed to avoid stress cracking. DC or pulsed DC power is preferred for metallic sputtering, with RF required for insulating oxide layers.

Summary:
Hafnium is a robust sputtering target material that offers excellent high-temperature stability, chemical resistance, and the ability to produce high-performance functional coatings, particularly in electronics, optics, and protective applications.

Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.