Ideal Vacuum Circular Magnetron Sputtering Targets, BISMUTH - (Bi) Sputtering Target, 3'' Diameter x 0.25" Thick, 99.99 Percent Purity

This product is a circular magnetron BISMUTH - Bi sputtering target, with a 3'' diameter x 0.25" thickness. It is 99.99% pure.

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BISMUTH - Bi

Key Properties for PVD Sputtering Targets
Appearance: Brittle, silvery-white metal with a slight pinkish hue
Density: ~9.78 g/cm³ (high)
Crystal Structure: Rhombohedral
Melting Point: 271.4 °C (low, heat-sensitive during sputtering)
Boiling Point: ~1564 °C
Thermal Conductivity: ~7.97 W/m·K (low, retains heat)
Electrical Resistivity: ~115 µO·cm (much higher than most metals, semimetallic behavior)
Oxidation: Forms a thin oxide layer in air but remains relatively stable at room temperature
Magnetic Properties: Diamagnetic
Sputtering Behavior: Soft, brittle target material with moderate sputter yield; requires careful power control to avoid melting or droplet formation


Applications: Bismuth is sputtered in PVD for pure metal or compound thin films, often using DC sputtering in metallic mode or RF for oxides. Its low melting point demands low to moderate power density and efficient cooling.

Bismuth Properties and Applications:

Topological & Thermoelectric Films: Bismuth and bismuth-based compounds (e.g., Bi2Te3, Bi2Se3) for thermoelectric devices and spintronic research

Optical Coatings: Bismuth oxide (Bi2O3) for high refractive index layers in optics and photonics

Electronics: Gate dielectrics, resistive switching layers, and ferroelectric components in memory devices (e.g., BiFeO3)

Catalysis: Bi-containing oxides for photocatalytic and electrochemical applications

Medical & Radiation Shielding Films: Due to its high density and non-toxic nature compared to lead

The electrical resistivity of bismuth metal is approximately 115 µO·cm at room temperature (~20 °C). This relatively high resistivity compared to most metals is due to bismuth’s semimetallic nature and low carrier density. In thin film applications, this property makes bismuth and its compounds useful in thermoelectrics, electronic switching layers, and functional oxide coatings, but it also means it’s less suitable for roles requiring high electrical conductivity.

Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.