Ideal Vacuum Circular Magnetron Sputtering Targets, TUNGSTEN - W Sputtering Target, 3'' Diameter x 0.25" Thick, 99.95 Percent Purity

This product is a circular magnetron Tungsten - W sputtering target, with a 3'' diameter x 0.25" thickness. It is 99.95% pure.

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TUNGSTEN (W)

Key Properties

Appearance: Steel-gray to silvery-white, lustrous metal

Density: ~19.25 g/cm³ (very high)

Crystal Structure: Body-centered cubic (BCC)

Melting Point: 3422 °C (highest of all metals)

Boiling Point: ~5555 °C

Thermal Conductivity: ~174 W/m·K (excellent heat dissipation)

Electrical Resistivity: ~5.28 µO·cm (good conductor, ideal for DC sputtering)

Coefficient of Thermal Expansion: ~4.5 × 10?6 /°C (low, excellent dimensional stability)

Chemical Stability: Very stable; forms a thin oxide layer in air, which is volatile (WO3) at high temperatures

Sputtering Behavior: High melting point and excellent thermal conductivity allow high power densities; dense target material yields smooth, high-purity films

Key Applications:

Tungsten is a critical sputtering material in PVD for applications requiring extreme durability, thermal stability, and high conductivity.

Microelectronics: Diffusion barriers and adhesion layers in ICs, tungsten plugs and interconnects in semiconductor devices

Microelectromechanical Systems (MEMS): Structural and conductive layers due to high density and stability

Reflective & Optical Coatings: High reflectivity in infrared optics and thermal control coatings

Hard & Wear-Resistant Coatings: For tools, dies, and high-wear mechanical parts

High-Temperature Components: Aerospace, defense, and furnace components

Thin Film Resistors: Stable, precise resistive layers in electronics

Summary
Tungsten’s exceptional melting point, mechanical strength, low thermal expansion, and excellent conductivity make it a premier choice for semiconductor, optical, high-temperature, and wear-resistant thin films produced via sputtering.

Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.