The Ideal Vacuum XFE-5 Dry is a Xenon Difluoride (XeF2) Etch System, utilizes a completely dry process eliminating the stiction that typically occur during wet etching process. Our Ideal Vacuum XFE-5 Dry Etching System offers better performance than any other etch system in the market now days with etchant, etched depth, and instantaneous etch rate for Silicon (Si) etching with XeF2 in a pulsed etching system in real time. The traditional Techniques used with our XFE-5 Dry Etch System offers better performance on the nonlinear etch process, with the initial etch rate being the highest and monotonically decreasing as the etchant is being depleted. With an initial pressure of 565 mTorr of XeF2 an instantaneous etch rate of 4.1 µm/min in Silicon was recorded.

The Ideal Vacuum XFE-10 Dry is a Xenon Difluoride (XeF2) Etch System, utilizes a completely dry process eliminating the stiction that typically occur during wet etching process. Our Ideal Vacuum XFE-10 Etching system offers better performance than any other etch system in the market now days with etchant, etched depth, and instantaneous etch rate for Silicon (Si) etching with XeF2 in a pulsed etching system in real time. The traditional Techniques used with our XFE-10 Dry Etch System offers better performance on the nonlinear etch process, with the initial etch rate being the highest and monotonically decreasing as the etchant is being depleted. With an initial pressure of 565 mTorr of XeF2 an instantaneous etch rate of 4.1 µm/min in Silicon was recorded.

The Ideal Vacuum XFE-20 Dry is a Xenon Difluoride (XeF2) Etch System, utilizes a completely dry process eliminating the stiction that typically occur during wet etching process. Our Ideal Vacuum XFE-20 Dry Etching System offers better performance than any other etch system in the market now days with etchant, etched depth, and instantaneous etch rate for Silicon (Si) etching with XeF2 in a pulsed etching system in real time. The traditional Techniques used with the Ideal Vacuum XFE-20 Dry Etch System offers better performance on the nonlinear etch process, with the initial etch rate being the highest and monotonically decreasing as the etchant is being depleted. With an initial pressure of 565 mTorr of XeF2 an instantaneous etch rate of 4.1 µm/min in Silicon was recorded.