The BOC Edwards iH80 iH 80 Subfab Semiconductor Dry Vacuum Pump System
Edwards PN A533-50-908
The BOC Edwards iH80 iH 80 Series subfab dry vacuum pumps offers high reliability for difficult harsh processes, such as Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Low Pressure Chemical Vapor Deposition (LPCVD), where particulate, condensable and corrosive by-products are present.
The BOC Edwards iH80 iH 80 subfab dry vacuum pumps operate at pressures between atmospheric and ultimate vacuum with no lubricating or sealing fluid in the pumping chamber. This ensures a clean pumping system without back-migration of oil into the system being evacuated.
The BOC Edwards iH80 iH 80 system has an HCDP80 chemical dry pump (HCDP) that has enclosed water-cooled motors. The iH system is therefore suitable for applications in clean environments where fan cooling of motors is unacceptable.
These Edwards iH 80 dry vacuum pumps have a gas system which introduces purge gas into the HCDP pump. This gas system is suitable for use on harsh duty processes. If you use the iH system on light or medium duty processes, you can use the economizer gas mode to reduce the consumption of purge nitrogen by the pumping system.
You can manually control the iH system through the pump display terminal. Alternatively, you can use your process tool or other control equipment to control the operation of the iH system through an Interface Module or through an iM communications module accessory or you can use the iH single equipment monitor accessory to control the operation of the Edwards iH subfab dry vacuum pump. For detailed specs and instruction manual on this Edwards iH80 iH 80 dry harsh chemical subfab pump see AVAILABLE DOWNLOADS below.
Semiconductor Fab Applications Include:
- Load Lock
- Physical Vapor Deposition PVD Process
- Physical Vapor Deposition PVD Pre-clean
- Rapid Thermal Anneal RTA
- Implant Source
- High-Density Plasma Chemical Vapor Deposition HDP CVD
- Rapid Thermal Processing RTP
- Sub-Atmospheric Chemical Vapor Deposition SACVD
- Tungsten Chemical Vapor Deposition WCVD
- Modified Chemical-Vapor Deposition MCVD
- Plasma-Enhanced Chemical Vapor Deposition PECVD
- Low Pressure Chemical Vapor Deposition LPCVD