Ideal Vacuum Circular Magnetron Sputtering Targets, HAFNIUM OXIDE - HfO2 Sputtering Target, 3'' Diameter x 0.25" Thick, 99.99 Percent Purity - White, Metallic Bonded to a 0.125" OFHC Copper Backing Plate
Ideal Vacuum Products, LLC.
This product is a circular magnetron HfO2 sputtering target, with a 3'' diameter x 0.25" thickness. It is 99.99% pure, and is metallically bonded to a 0.125" OFHC (Oxygen-Free High Conductivity) copper backing plate
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Hafnium Oxide (HfO2)
Properties
Appearance: Transparent to slightly off-white in bulk; clear in thin films
Density: ~9.68 g/cm³ (high for an oxide)
Crystal Structure: Monoclinic at room temperature; can be stabilized in tetragonal or cubic phases at high temperature or with dopants
Melting Point: ~2758 °C (excellent thermal stability)
Thermal Conductivity: ~1.1–1.2 W/m·K (low, retains heat)
Electrical Properties: Wide bandgap (~5.3–5.8 eV), very high resistivity (>10¹4 O·cm)
Refractive Index: ~2.0–2.2 in the visible spectrum (high-index material)
Chemical Stability: Chemically inert and corrosion-resistant; stable in oxidizing environments
Usage in Thin Films
HfO2 is a high-performance dielectric and optical material widely deposited using RF magnetron sputtering or pulsed DC sputtering in PVD systems. Its combination of high refractive index, wide bandgap, and thermal stability makes it suitable for advanced optical, electronic, and protective applications.
Key Applications:
Optical Coatings: High-index layers in anti-reflective coatings, interference filters, laser optics, and mirrors
Microelectronics: High-k dielectric in MOSFET gates, DRAM capacitors, and insulating barriers
Protective Coatings: Scratch-resistant and corrosion-protective layers for optics and sensors
Thermal & Radiation Barriers: Due to high melting point and stability in harsh environments
Photonic Devices: Waveguides, resonators, and integrated optical circuits requiring high-index contrast
Summary:
HfO2 is prized in thin film technology for its optical clarity, chemical inertness, high dielectric constant, and thermal robustness, making it one of the most important materials for precision optics and next-generation semiconductor devices..
Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.